STGE50NB60HD n-channel 50a - 600v isotop powermesh ? igbt preliminary data n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n very high frequency operation n off losses include tail current n co-packaged with turboswitch ? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized to achieve very low switching times for high frequency applications (<120khz). applications n high frequency motor controls n welding equipments n smps and pfc in both hard switch and resonant topologies ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 o c100a i c collector current (continuous) at t c = 100 o c50a i cm ( ) collector current (pulsed) 400 a p tot total dissipation at t c = 25 o c300w derating factor 2.4 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v ces v ce(sat) i c STGE50NB60HD 600 v < 2.8 v 50 a june 1999 isotop 1/6
thermal data r thj-case r thj-amb r thc-h thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-heatsink typ 0.416 30 0.1 o c/w o c/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 m a v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating t j = 25 o c v ce = max rating t j = 125 o c 100 1000 m a m a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v v ce = 0 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a35v v ce(sat) collector-emitter saturation voltage v ge = 15 v i c = 50 a v ge = 15 v i c = 50 a t j = 125 o c 2.3 1.9 2.8 v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25 v i c = 50 a 22 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 4500 450 90 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v i c = 50 a v ge = 15 v 260 28 15 nc nc nc i cl latching current v clamp = 480 v r g =10 w t j = 150 o c 200 a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 480 v i c = 50 a v ge = 15 v r g = 10 w 20 70 ns ns (di/dt) on e on ( m ) turn-on current slope turn-on switching losses v cc = 480 v i c = 50 a r g = 10 w v ge = 15 v t j = 125 o c 350 950 a/ m s m j STGE50NB60HD 2/6
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 50 a r ge = 10 w v ge = 15 v 166 48 326 90 2.1 3 ns ns ns ns mj mj t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 50 a r ge = 10 w v ge = 15 v t j = 125 o c 270 75 340 200 2.9 3.85 ns ns ns ns mj mj collector-emitter diode symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 50 400 a a v f forward on-voltage i f = 50 a i f = 50 a t j = 125 o c2 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 50 a v r = 200 v di/dt = 100 a/ m s t j = 125 o c 200 ns nc a ( ) pulse width limited by max. junction temperature ( m ) include recovery losses on the stta2006 freewheeling diode ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % (**)losses include also the tail (jedec standardization) STGE50NB60HD 3/6
fig. 1 : gate charge test circuit fig. 3 : switching waveforms fig. 2 : test circuit for inductive load switching STGE50NB60HD 4/6
dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n4 0.157 o 7.8 8.2 0.307 0.322 b e h o n j k l m f a c g d isotop mechanical data STGE50NB60HD 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STGE50NB60HD 6/6
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